Unmounted chips, dice and wafers
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals; parts thereof: > Transistors, other than photosensitive transistors: > Other > Unmounted chips, dice and wafers
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8541.29.00.40
Darlington Transistor Wafer Array
Silicon wafer with Darlington paired transistor arrays for high gain switching. HTS 8541.29.00.40.
RF Silicon Wafer with Multiple Transistor Types
Multi-project silicon wafer containing various RF transistor test structures. Unmounted under HTS 8541.29.00.40.
LDMOS RF Power Transistor Wafer
Laterally Diffused Metal Oxide Semiconductor wafer for broadcast transmitters. Unmounted under HTS 8541.29.00.40. High power RF amplification capability.
Silicon Carbide JFET Wafer
SiC Junction Field Effect Transistor wafer for high-temperature sensing. HTS 8541.29.00.40 classification. Extreme environment operation.
BiCMOS Transistor Wafer
Bipolar CMOS mixed-signal transistor wafer for analog-digital interfaces. Unmounted chips HTS 8541.29.00.40.
SOI MOSFET Transistor Wafer
Silicon-On-Insulator MOSFET wafer for radiation-hardened electronics. HTS 8541.29.00.40 unmounted.
Silicon NPN Power Transistor Wafer
Unmounted silicon wafer containing thousands of NPN bipolar junction transistor dice, used in power amplification circuits for automotive and industrial applications. Classified under HTS 8541.29.00.40 as unmounted chips, dice, and wafers of transistors other than photosensitive types. These are raw semiconductor substrates prior to dicing and packaging.
Silicon Germanium HBT Wafer
SiGe Heterojunction Bipolar Transistor wafer for high-speed analog ICs in telecom handsets. Unmounted chips under HTS 8541.29.00.40 as non-photosensitive transistors. Enables low-noise amplification at mmWave frequencies.
Power LDMOS Wafer for Base Stations
Laterally diffused power LDMOS wafer for cellular base stations. Unmounted HTS 8541.29.00.40.
IGBT Silicon Wafer for Motor Drives
Insulated Gate Bipolar Transistor wafer for industrial motor controls and traction systems. HTS 8541.29.00.40 for unmounted power transistor wafers. High current handling for frequency converters.
Gallium Arsenide RF Transistor Die
Unmounted GaAs chips or dice designed for high-frequency RF transistors used in wireless communication base stations. Falls under HTS 8541.29.00.40 as unmounted transistor dice other than photosensitive. These high-electron-mobility transistor (HEMT) structures are pre-packaging for microwave applications.
MOSFET Silicon Wafer for Power Electronics
300mm silicon wafer with fabricated MOSFET transistor arrays for electric vehicle inverters and power supplies. Classified as unmounted chips/wafers under HTS 8541.29.00.40 for non-photosensitive transistors. These are intermediate products before singulation into individual dice.
Bipolar Junction Transistor Test Wafer
Silicon test wafer with monitor BJT structures for semiconductor process control and yield monitoring. HTS 8541.29.00.40 applies to these unmounted transistor wafers used in fab qualification. Not intended for end-use but essential for manufacturing quality assurance.
SiC Power Transistor Wafer
4-inch silicon carbide (SiC) wafer with power MOSFET transistor cells for high-voltage applications like solar inverters. Unmounted status qualifies under HTS 8541.29.00.40 for transistor wafers. Superior thermal performance over silicon for harsh environments.
GaN HEMT Transistor Die on Wafer
Gallium Nitride High Electron Mobility Transistor dice on 6-inch wafer for radar and satellite amplifiers. HTS 8541.29.00.40 covers these unmounted RF transistor chips. Critical for defense and aerospace high-power RF applications.