GaN HEMT Transistor Die on Wafer
Gallium Nitride High Electron Mobility Transistor dice on 6-inch wafer for radar and satellite amplifiers. HTS 8541.29.00.40 covers these unmounted RF transistor chips. Critical for defense and aerospace high-power RF applications.
Import Duty Rates by Country of Origin
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If integrated into radar transmission apparatus
Assembled into complete radar systems falls under heading 8517.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right HTS code — and can price the duty on it in the same conversation.
Import Tips & Compliance
• ITAR/EAR compliance mandatory; file EEI for values over $2500
• Declare frequency range (e.g
• X-band) to confirm non-military if applicable
Related Products under HTS 8541.29.00.40
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Silicon wafer with Darlington paired transistor arrays for high gain switching. HTS 8541.29.00.40.
RF Silicon Wafer with Multiple Transistor Types
Multi-project silicon wafer containing various RF transistor test structures. Unmounted under HTS 8541.29.00.40.
LDMOS RF Power Transistor Wafer
Laterally Diffused Metal Oxide Semiconductor wafer for broadcast transmitters. Unmounted under HTS 8541.29.00.40. High power RF amplification capability.
Silicon Carbide JFET Wafer
SiC Junction Field Effect Transistor wafer for high-temperature sensing. HTS 8541.29.00.40 classification. Extreme environment operation.
BiCMOS Transistor Wafer
Bipolar CMOS mixed-signal transistor wafer for analog-digital interfaces. Unmounted chips HTS 8541.29.00.40.
SOI MOSFET Transistor Wafer
Silicon-On-Insulator MOSFET wafer for radiation-hardened electronics. HTS 8541.29.00.40 unmounted.