8541.29.00.40/GaN HEMT Transistor Die on Wafer/China

GaN HEMT Transistor Die on Wafer from China

Gallium Nitride High Electron Mobility Transistor dice on 6-inch wafer for radar and satellite amplifiers. HTS 8541.29.00.40 covers these unmounted RF transistor chips. Critical for defense and aerospace high-power RF applications.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

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Import Tips

• ITAR/EAR compliance mandatory; file EEI for values over $2500

• Declare frequency range (e.g

• X-band) to confirm non-military if applicable