GaN HEMT Transistor Die on Wafer from Canada
Gallium Nitride High Electron Mobility Transistor dice on 6-inch wafer for radar and satellite amplifiers. HTS 8541.29.00.40 covers these unmounted RF transistor chips. Critical for defense and aerospace high-power RF applications.
Duty Rate — Canada → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• ITAR/EAR compliance mandatory; file EEI for values over $2500
• Declare frequency range (e.g
• X-band) to confirm non-military if applicable