8541.29.00.40/LDMOS RF Power Transistor Wafer/Mexico

LDMOS RF Power Transistor Wafer from Mexico

Laterally Diffused Metal Oxide Semiconductor wafer for broadcast transmitters. Unmounted under HTS 8541.29.00.40. High power RF amplification capability.

Duty Rate — Mexico → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Specify output power (100-1000W) and frequency band