8541.29.00.40/LDMOS RF Power Transistor Wafer/China

LDMOS RF Power Transistor Wafer from China

Laterally Diffused Metal Oxide Semiconductor wafer for broadcast transmitters. Unmounted under HTS 8541.29.00.40. High power RF amplification capability.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter

9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter

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Import Tips

• Specify output power (100-1000W) and frequency band