LDMOS RF Power Transistor Wafer from Japan
Laterally Diffused Metal Oxide Semiconductor wafer for broadcast transmitters. Unmounted under HTS 8541.29.00.40. High power RF amplification capability.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Specify output power (100-1000W) and frequency band