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8541.29.00.40/LDMOS RF Power Transistor Wafer/Canada

LDMOS RF Power Transistor Wafer from Canada

Laterally Diffused Metal Oxide Semiconductor wafer for broadcast transmitters. Unmounted under HTS 8541.29.00.40. High power RF amplification capability.

Duty Rate — Canada → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))
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Import Tips

• Specify output power (100-1000W) and frequency band