4-inch N-type Doped Silicon Carbide Wafer
A 4-inch diameter silicon carbide wafer doped with nitrogen to achieve N-type conductivity, used as a substrate in power electronics manufacturing. It falls under HTS 3818.00.00.30 as a chemical compound doped for use in electronics, specifically in disc or wafer form. These wafers enable high-temperature, high-voltage semiconductor devices like Schottky diodes.
Import Duty Rates by Country of Origin
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If undoped or not specifically for electronics
Undoped silicon carbide, regardless of form, falls under carbides heading rather than doped electronic compounds.
If silicon-based instead of silicon carbide
Pure silicon wafers doped for electronics use a different subheading within the same heading 3818.
If processed into semiconductor devices or circuits
Once fabricated into photosensitive or non-photosensitive semiconductor components, it shifts to Chapter 85.
Not sure which classification is right?
Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.
Import Tips & Compliance
• Verify doping type (N/P) and resistivity via certificates; US Customs requires documentation matching electronic-grade specs
• Ensure epitaxial readiness certification to avoid reclassification as undoped silicon carbide (HTS 2849.20)
• Comply with REACH-like restrictions on impurities; common pitfall is failing flatness/taper measurements leading to returns
Related Products under HTS 3818.00.00.30
6-inch 4H-SiC P-type Doped Wafer
A 6-inch 4H polytype silicon carbide wafer doped with aluminum for P-type properties, essential for MOSFET production in electric vehicles. Classified under HTS 3818.00.00.30 due to its doping for electronic applications in wafer form. High purity and low defect density support advanced power semiconductor fabrication.
150mm Nitrogen-Doped SiC Wafer for RF Devices
150mm silicon carbide wafer with nitrogen doping, optimized for high-frequency RF and microwave semiconductor applications. It qualifies for HTS 3818.00.00.30 as a doped chemical compound in wafer form for electronics. These wafers offer superior thermal management in GaN-on-SiC HEMTs.
3-inch High-Purity N-Doped SiC Wafer
Compact 3-inch nitrogen-doped silicon carbide wafer with ultra-low defect counts for research and prototyping in power electronics. Falls under HTS 3818.00.00.30 as doped SiC in disc form for electronic use. Ideal for universities and R&D in high-voltage switches.
8-inch 4H N-Epi Ready Doped SiC Wafer
8-inch 4H-SiC wafer nitrogen-doped and epi-ready for immediate epitaxial growth in SiC power device production. Classified in HTS 3818.00.00.30 for its doping tailored to electronics wafers. Supports manufacturing of 1200V+ power modules for renewables.
100mm Aluminum-Doped SiC Wafer for Sensors
100mm P-type silicon carbide wafer doped with aluminum, used in harsh-environment sensors and MEMS devices. HTS 3818.00.00.30 applies as doped compound wafer for electronics. Excellent for automotive and aerospace sensing applications.
5-inch Semi-Insulating SiC Wafer (Chromium-Doped)
5-inch high-resistivity silicon carbide wafer chromium-doped for semi-insulating properties in RF GaN devices. Under HTS 3818.00.00.30 as specialty doped electronic wafer. Critical for low-loss microwave amplifiers.