4-inch N-type Doped Silicon Carbide Wafer from China
A 4-inch diameter silicon carbide wafer doped with nitrogen to achieve N-type conductivity, used as a substrate in power electronics manufacturing. It falls under HTS 3818.00.00.30 as a chemical compound doped for use in electronics, specifically in disc or wafer form. These wafers enable high-temperature, high-voltage semiconductor devices like Schottky diodes.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Verify doping type (N/P) and resistivity via certificates; US Customs requires documentation matching electronic-grade specs
• Ensure epitaxial readiness certification to avoid reclassification as undoped silicon carbide (HTS 2849.20)
• Comply with REACH-like restrictions on impurities; common pitfall is failing flatness/taper measurements leading to returns