150mm Nitrogen-Doped SiC Wafer for RF Devices
150mm silicon carbide wafer with nitrogen doping, optimized for high-frequency RF and microwave semiconductor applications. It qualifies for HTS 3818.00.00.30 as a doped chemical compound in wafer form for electronics. These wafers offer superior thermal management in GaN-on-SiC HEMTs.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If doped chemical elements like pure silicon discs
Distinguishes silicon carbide compounds from elemental silicon wafers in electronics doping.
If integrated into electronic integrated circuits
Post-epitaxy and device fabrication moves to integrated circuits heading.
If in bulk sulphide/peroxide/oxide form
Non-carbide silicon compounds in immediate chemical forms are elsewhere in Chapter 28.
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Import Tips & Compliance
• Include SEMI MBF-198 standards compliance cert for handling/shipping to prevent damage claims
• Document carrier lifetime specs; poor documentation leads to reclassification as lower-grade material
• Check ITAR/EAR restrictions if destined for defense RF apps; declare end-use clearly
Related Products under HTS 3818.00.00.30
4-inch N-type Doped Silicon Carbide Wafer
A 4-inch diameter silicon carbide wafer doped with nitrogen to achieve N-type conductivity, used as a substrate in power electronics manufacturing. It falls under HTS 3818.00.00.30 as a chemical compound doped for use in electronics, specifically in disc or wafer form. These wafers enable high-temperature, high-voltage semiconductor devices like Schottky diodes.
6-inch 4H-SiC P-type Doped Wafer
A 6-inch 4H polytype silicon carbide wafer doped with aluminum for P-type properties, essential for MOSFET production in electric vehicles. Classified under HTS 3818.00.00.30 due to its doping for electronic applications in wafer form. High purity and low defect density support advanced power semiconductor fabrication.
3-inch High-Purity N-Doped SiC Wafer
Compact 3-inch nitrogen-doped silicon carbide wafer with ultra-low defect counts for research and prototyping in power electronics. Falls under HTS 3818.00.00.30 as doped SiC in disc form for electronic use. Ideal for universities and R&D in high-voltage switches.
8-inch 4H N-Epi Ready Doped SiC Wafer
8-inch 4H-SiC wafer nitrogen-doped and epi-ready for immediate epitaxial growth in SiC power device production. Classified in HTS 3818.00.00.30 for its doping tailored to electronics wafers. Supports manufacturing of 1200V+ power modules for renewables.
100mm Aluminum-Doped SiC Wafer for Sensors
100mm P-type silicon carbide wafer doped with aluminum, used in harsh-environment sensors and MEMS devices. HTS 3818.00.00.30 applies as doped compound wafer for electronics. Excellent for automotive and aerospace sensing applications.
5-inch Semi-Insulating SiC Wafer (Chromium-Doped)
5-inch high-resistivity silicon carbide wafer chromium-doped for semi-insulating properties in RF GaN devices. Under HTS 3818.00.00.30 as specialty doped electronic wafer. Critical for low-loss microwave amplifiers.