3818.00.00.30/150mm Nitrogen-Doped SiC Wafer for RF Devices/Germany

150mm Nitrogen-Doped SiC Wafer for RF Devices from Germany

150mm silicon carbide wafer with nitrogen doping, optimized for high-frequency RF and microwave semiconductor applications. It qualifies for HTS 3818.00.00.30 as a doped chemical compound in wafer form for electronics. These wafers offer superior thermal management in GaN-on-SiC HEMTs.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include SEMI MBF-198 standards compliance cert for handling/shipping to prevent damage claims

• Document carrier lifetime specs; poor documentation leads to reclassification as lower-grade material

• Check ITAR/EAR restrictions if destined for defense RF apps; declare end-use clearly

150mm Nitrogen-Doped SiC Wafer for RF Devices from Germany — Import Duty Rate | HTS 3818.00.00.30