150mm Nitrogen-Doped SiC Wafer for RF Devices from Mexico
150mm silicon carbide wafer with nitrogen doping, optimized for high-frequency RF and microwave semiconductor applications. It qualifies for HTS 3818.00.00.30 as a doped chemical compound in wafer form for electronics. These wafers offer superior thermal management in GaN-on-SiC HEMTs.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Include SEMI MBF-198 standards compliance cert for handling/shipping to prevent damage claims
• Document carrier lifetime specs; poor documentation leads to reclassification as lower-grade material
• Check ITAR/EAR restrictions if destined for defense RF apps; declare end-use clearly