3818.00.00.30/4-inch N-type Doped Silicon Carbide Wafer/Mexico

4-inch N-type Doped Silicon Carbide Wafer from Mexico

A 4-inch diameter silicon carbide wafer doped with nitrogen to achieve N-type conductivity, used as a substrate in power electronics manufacturing. It falls under HTS 3818.00.00.30 as a chemical compound doped for use in electronics, specifically in disc or wafer form. These wafers enable high-temperature, high-voltage semiconductor devices like Schottky diodes.

Duty Rate — Mexico → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Verify doping type (N/P) and resistivity via certificates; US Customs requires documentation matching electronic-grade specs

• Ensure epitaxial readiness certification to avoid reclassification as undoped silicon carbide (HTS 2849.20)

• Comply with REACH-like restrictions on impurities; common pitfall is failing flatness/taper measurements leading to returns

4-inch N-type Doped Silicon Carbide Wafer from Mexico — Import Duty Rate | HTS 3818.00.00.30