Undoped GaAs Wafer 6-inch EPI-Ready
A 6-inch epi-ready undoped gallium arsenide wafer with polished surface for direct epitaxial deposition in high-frequency electronics production. Classified in HTS 2853.90.90.10 as undoped GaAs wafers, part of other inorganic compounds including phosphides. These are essential for RF and microwave semiconductor applications.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If intentionally doped with impurities for conductivity
Chapter Note specifies doped forms cut into wafers fall in 3818; undoped status is critical for 2853.
If assembled into integrated circuits
Post-processing into ICs or processors shifts to 8542 as electronic integrated circuits.
If prepared mixtures or doped during import
Chemical preparations containing GaAs compounds may classify under 3824 if not purely chemically defined.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right HTS code — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Provide epitaxial readiness certification and surface roughness specs (e.g
• <0.2 nm RMS) to support undoped substrate classification
• Watch for common pitfalls like incorrect declaration as 'semiconductor wafers' leading to Chapter 85; specify 'undoped GaAs' explicitly
• Ensure compliance with REACH and RoHS for arsenide compounds, including safety data sheets for hazardous material handling
Related Products under HTS 2853.90.90.10
Undoped Gallium Arsenide Wafer 4-inch Diameter
A 4-inch diameter undoped gallium arsenide (GaAs) wafer used as a substrate in semiconductor manufacturing for devices like LEDs and solar cells. It falls under HTS 2853.90.90.10 as undoped GaAs wafers, classified as inorganic compounds including phosphides whether or not chemically defined. These wafers are typically high-purity, single-crystal slices prepared for epitaxial growth.
2-inch Undoped Gallium Arsenide Test Wafer
A 2-inch undoped GaAs test wafer used for process control and calibration in semiconductor fabs. It is classified under HTS 2853.90.90.10 as undoped gallium arsenide wafers, within other inorganic compounds. These smaller wafers are ideal for R&D and quality assurance.
Undoped Gallium Arsenide Wafer 150mm for Optoelectronics
150mm undoped GaAs wafer optimized for optoelectronic device fabrication such as laser diodes. Classified in HTS 2853.90.90.10 as undoped wafers under other inorganic compounds including phosphides. High purity essential for light-emitting applications.
Undoped GaAs Wafer 100mm Thick Film Substrate
100mm undoped gallium arsenide wafer designed as a substrate for thick-film deposition in hybrid circuits. Falls under HTS 2853.90.90.10 for undoped GaAs wafers as inorganic phosphide compounds. Used in microwave and power electronics.