2853.90.90.10/Undoped GaAs Wafer 6-inch EPI-Ready/Japan

Undoped GaAs Wafer 6-inch EPI-Ready from Japan

A 6-inch epi-ready undoped gallium arsenide wafer with polished surface for direct epitaxial deposition in high-frequency electronics production. Classified in HTS 2853.90.90.10 as undoped GaAs wafers, part of other inorganic compounds including phosphides. These are essential for RF and microwave semiconductor applications.

Duty Rate — Japan → United States

2.8%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

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Import Tips

• Provide epitaxial readiness certification and surface roughness specs (e.g

• <0.2 nm RMS) to support undoped substrate classification

• Watch for common pitfalls like incorrect declaration as 'semiconductor wafers' leading to Chapter 85; specify 'undoped GaAs' explicitly

• Ensure compliance with REACH and RoHS for arsenide compounds, including safety data sheets for hazardous material handling