Gallium arsenide wafers, undoped
Phosphides, whether or not chemically defined, excluding ferrophosphorous; other inorganic compounds (including distilled or conductivity water and water of similar purity); liquid air (whether or not rare gases have been removed); compressed air; amalgams, other than amalgams of precious metals: > Other: > Other > Gallium arsenide wafers, undoped
Duty Rate (from China)
Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 2853.90.90.10
Undoped Gallium Arsenide Wafer 4-inch Diameter
A 4-inch diameter undoped gallium arsenide (GaAs) wafer used as a substrate in semiconductor manufacturing for devices like LEDs and solar cells. It falls under HTS 2853.90.90.10 as undoped GaAs wafers, classified as inorganic compounds including phosphides whether or not chemically defined. These wafers are typically high-purity, single-crystal slices prepared for epitaxial growth.
Undoped GaAs Wafer 6-inch EPI-Ready
A 6-inch epi-ready undoped gallium arsenide wafer with polished surface for direct epitaxial deposition in high-frequency electronics production. Classified in HTS 2853.90.90.10 as undoped GaAs wafers, part of other inorganic compounds including phosphides. These are essential for RF and microwave semiconductor applications.
2-inch Undoped Gallium Arsenide Test Wafer
A 2-inch undoped GaAs test wafer used for process control and calibration in semiconductor fabs. It is classified under HTS 2853.90.90.10 as undoped gallium arsenide wafers, within other inorganic compounds. These smaller wafers are ideal for R&D and quality assurance.
Undoped Gallium Arsenide Wafer 150mm for Optoelectronics
150mm undoped GaAs wafer optimized for optoelectronic device fabrication such as laser diodes. Classified in HTS 2853.90.90.10 as undoped wafers under other inorganic compounds including phosphides. High purity essential for light-emitting applications.
Undoped GaAs Wafer 100mm Thick Film Substrate
100mm undoped gallium arsenide wafer designed as a substrate for thick-film deposition in hybrid circuits. Falls under HTS 2853.90.90.10 for undoped GaAs wafers as inorganic phosphide compounds. Used in microwave and power electronics.