Undoped Gallium Arsenide Wafer 4-inch Diameter
A 4-inch diameter undoped gallium arsenide (GaAs) wafer used as a substrate in semiconductor manufacturing for devices like LEDs and solar cells. It falls under HTS 2853.90.90.10 as undoped GaAs wafers, classified as inorganic compounds including phosphides whether or not chemically defined. These wafers are typically high-purity, single-crystal slices prepared for epitaxial growth.
Import Duty Rates by Country of Origin
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If doped for electronic use and cut into wafers or discs
Doped chemical elements like GaAs for electronics, when cut into wafers, are classified in 3818 per Chapter Note, not as undoped inorganic compounds.
If processed into photosensitive semiconductor devices
Once fabricated into functional photosensitive wafers or devices like image sensors, they move to Chapter 85 for electrical machinery.
If considered carbides or other simple inorganic compounds
Alternative if not specifically fitting phosphides but as other carbides; however, GaAs is primarily under 2853 as a compound.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right HTS code — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Verify wafer purity and doping status with certificates of analysis to confirm classification under 2853.90.90.10; doped wafers shift to 3818
• Include detailed technical specs (diameter, thickness, orientation) in commercial invoices to avoid misclassification as finished semiconductor devices
• Comply with US export controls on GaAs materials under EAR due to potential dual-use in electronics and defense applications
Related Products under HTS 2853.90.90.10
Undoped GaAs Wafer 6-inch EPI-Ready
A 6-inch epi-ready undoped gallium arsenide wafer with polished surface for direct epitaxial deposition in high-frequency electronics production. Classified in HTS 2853.90.90.10 as undoped GaAs wafers, part of other inorganic compounds including phosphides. These are essential for RF and microwave semiconductor applications.
2-inch Undoped Gallium Arsenide Test Wafer
A 2-inch undoped GaAs test wafer used for process control and calibration in semiconductor fabs. It is classified under HTS 2853.90.90.10 as undoped gallium arsenide wafers, within other inorganic compounds. These smaller wafers are ideal for R&D and quality assurance.
Undoped Gallium Arsenide Wafer 150mm for Optoelectronics
150mm undoped GaAs wafer optimized for optoelectronic device fabrication such as laser diodes. Classified in HTS 2853.90.90.10 as undoped wafers under other inorganic compounds including phosphides. High purity essential for light-emitting applications.
Undoped GaAs Wafer 100mm Thick Film Substrate
100mm undoped gallium arsenide wafer designed as a substrate for thick-film deposition in hybrid circuits. Falls under HTS 2853.90.90.10 for undoped GaAs wafers as inorganic phosphide compounds. Used in microwave and power electronics.