2853.90.90.10/Undoped Gallium Arsenide Wafer 4-inch Diameter/China

Undoped Gallium Arsenide Wafer 4-inch Diameter from China

A 4-inch diameter undoped gallium arsenide (GaAs) wafer used as a substrate in semiconductor manufacturing for devices like LEDs and solar cells. It falls under HTS 2853.90.90.10 as undoped GaAs wafers, classified as inorganic compounds including phosphides whether or not chemically defined. These wafers are typically high-purity, single-crystal slices prepared for epitaxial growth.

Duty Rate — China → United States

27.8%

Rate breakdown

9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)

9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter

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Import Tips

• Verify wafer purity and doping status with certificates of analysis to confirm classification under 2853.90.90.10; doped wafers shift to 3818

• Include detailed technical specs (diameter, thickness, orientation) in commercial invoices to avoid misclassification as finished semiconductor devices

• Comply with US export controls on GaAs materials under EAR due to potential dual-use in electronics and defense applications