Undoped GaAs Wafer 6-inch EPI-Ready from China
A 6-inch epi-ready undoped gallium arsenide wafer with polished surface for direct epitaxial deposition in high-frequency electronics production. Classified in HTS 2853.90.90.10 as undoped GaAs wafers, part of other inorganic compounds including phosphides. These are essential for RF and microwave semiconductor applications.
Duty Rate — China → United States
27.8%
Rate breakdown
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide epitaxial readiness certification and surface roughness specs (e.g
• <0.2 nm RMS) to support undoped substrate classification
• Watch for common pitfalls like incorrect declaration as 'semiconductor wafers' leading to Chapter 85; specify 'undoped GaAs' explicitly
• Ensure compliance with REACH and RoHS for arsenide compounds, including safety data sheets for hazardous material handling