Alliance Memory AS4C256M16D3-12BCN 256Mb DDR3L DRAM
256 megabit low-voltage DDR3L DRAM chip replacement for legacy systems and IoT devices. Classified in HTS 8542.32.0024 as a dynamic read-write random access memory within the specified megabit range. Supports extended temperature range for rugged applications.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If over 1 gigabit but not over 2 gigabits capacity
Sequential megabit thresholds dictate precise 8542.32 subheading placement.
If for hybrid ICs combining memory with hybrid technology
Hybrid integrated circuits separate from monolithic under 8542.90.
If part of wired telecommunications apparatus
ICs integral to telecom equipment may classify with the apparatus.
Not sure which classification is right?
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Import Tips & Compliance
• Declare density per chip, not total package, to match exact subheading
• Include country-of-origin certificates; many DRAMs from Taiwan/China face scrutiny
• Anti-dumping duties may apply; check Commerce Department listings
Related Products under HTS 8542.32.00.24
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This is a 256 megabit DDR3 synchronous dynamic random access memory (DRAM) integrated circuit designed for high-performance computing applications. It falls under HTS 8542.32.0024 because it is a dynamic read-write random access memory with capacity over 128 megabits but not over 256 megabits. Commonly used in laptops and embedded systems for temporary data storage.
Micron MT46H64M32BFCM-6 2Gb DDR2 DRAM IC (256Mx8)
A 256 megabit (organized as 256M x 8) DDR2 SDRAM chip used in consumer electronics and networking equipment. Classified under HTS 8542.32.0024 due to its dynamic read-write random access memory capacity between 128 and 256 megabits. Provides high-speed data access for temporary storage in devices.
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