Over 128 megabits but not over 256 megabits
Electronic integrated circuits; parts thereof: > Electronic integrated circuits: > Memories > Dynamic read-write random access (DRAM): > Over 128 megabits but not over 256 megabits
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8542.32.00.24
Samsung K4B2G1646G-BCK0 256Mb DDR3 DRAM Chip
This is a 256 megabit DDR3 synchronous dynamic random access memory (DRAM) integrated circuit designed for high-performance computing applications. It falls under HTS 8542.32.0024 because it is a dynamic read-write random access memory with capacity over 128 megabits but not over 256 megabits. Commonly used in laptops and embedded systems for temporary data storage.
Micron MT46H64M32BFCM-6 2Gb DDR2 DRAM IC (256Mx8)
A 256 megabit (organized as 256M x 8) DDR2 SDRAM chip used in consumer electronics and networking equipment. Classified under HTS 8542.32.0024 due to its dynamic read-write random access memory capacity between 128 and 256 megabits. Provides high-speed data access for temporary storage in devices.
Hynix H5TQ2G43BFR-H9 256Mb Mobile DDR DRAM Chip
Low-power 256 megabit mobile DDR DRAM integrated circuit optimized for smartphones and tablets. It qualifies for HTS 8542.32.0024 as a dynamic read-write random access memory in the 128-256 megabit range. Enables efficient multitasking in portable devices.
Renesas R1MP161664APG-80 256Mbit SDRAM Chip
A 256 megabit synchronous DRAM (SDRAM) IC with 80ns access time for industrial control systems. Falls under HTS 8542.32.0024 for its dynamic read-write memory capacity over 128 but not over 256 megabits. Used in embedded applications requiring reliable data buffering.
Alliance Memory AS4C256M16D3-12BCN 256Mb DDR3L DRAM
256 megabit low-voltage DDR3L DRAM chip replacement for legacy systems and IoT devices. Classified in HTS 8542.32.0024 as a dynamic read-write random access memory within the specified megabit range. Supports extended temperature range for rugged applications.
ISSI IS42S16160G-6BLI 256Mb SDRAM Automotive Grade
Automotive-qualified 256 megabit SDRAM IC with extended temperature operation (-40°C to 85°C). Meets HTS 8542.32.0024 criteria for dynamic read-write memories 128-256 megabits. Used in car infotainment and ADAS systems.
Winbond W9825G6JH-6 256Mb Low Cost SDRAM Chip
Cost-optimized 256 megabit SDRAM for consumer printers and set-top boxes. HTS 8542.32.0024 applies to this dynamic RAM with capacity over 128 but not exceeding 256 megabits. Features 6ns access time for budget applications.
Nanya NT5CB256M16DP-DI 256Mb DDR3L Industrial DRAM
Industrial-grade 256 megabit DDR3L SDRAM for servers and networking gear. Classified under HTS 8542.32.0024 for 128-256 megabit dynamic read-write memories. Offers ECC support for error correction in mission-critical systems.