Alliance Memory AS4C256M16D3-12BCN 256Mb DDR3L DRAM from Japan

256 megabit low-voltage DDR3L DRAM chip replacement for legacy systems and IoT devices. Classified in HTS 8542.32.0024 as a dynamic read-write random access memory within the specified megabit range. Supports extended temperature range for rugged applications.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

Import Tips

Declare density per chip, not total package, to match exact subheading

Include country-of-origin certificates; many DRAMs from Taiwan/China face scrutiny

Anti-dumping duties may apply; check Commerce Department listings

Alliance Memory AS4C256M16D3-12BCN 256Mb DDR3L DRAM from Japan — Import Duty Rate | HTS 8542.32.00.24