Alliance Memory AS4C256M16D3-12BCN 256Mb DDR3L DRAM from China
256 megabit low-voltage DDR3L DRAM chip replacement for legacy systems and IoT devices. Classified in HTS 8542.32.0024 as a dynamic read-write random access memory within the specified megabit range. Supports extended temperature range for rugged applications.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Declare density per chip, not total package, to match exact subheading
• Include country-of-origin certificates; many DRAMs from Taiwan/China face scrutiny
• Anti-dumping duties may apply; check Commerce Department listings