Silicon Carbide Power MOSFET Wafer
A 6-inch silicon carbide (SiC) wafer containing unmounted chips designed for high-voltage power MOSFET transistors used in electric vehicles and renewable energy inverters. Classified under HTS 8541.59.00.40 as unmounted semiconductor wafers for power semiconductor devices. These wafers undergo dicing into individual dice post-import for die attach in power modules.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If still in raw semiconductor substrate form without doping
Undoped silicon or SiC wafers before semiconductor processing fall under heading 3818 as semiconductor-grade materials rather than finished devices.
If processed into mounted integrated circuits
Once chips are mounted on carriers or leads and become electronic integrated circuits, they shift to heading 8542.
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Import Tips & Compliance
• Provide wafer specifications including diameter, doping type, and resistivity to confirm semiconductor device classification; declare exact material composition (SiC vs silicon) to avoid misclassification; obtain mill test certificates verifying unmounted status and no assembly
Related Products under HTS 8541.59.00.40
Gallium Nitride RF Transistor Die
Unmounted GaN high-electron-mobility transistor (HEMT) dice on 4-inch wafers for 5G base stations and radar systems, featuring 50V breakdown voltage. Falls under HTS 8541.59.00.40 as unmounted semiconductor dice for RF power amplification devices. Imported for die bonding onto RF modules.
8-Inch Silicon CMOS Sensor Wafer
300mm silicon wafer with unseparated CMOS image sensor chips for industrial machine vision cameras, featuring 12MP resolution per die. HTS 8541.59.00.40 applies to photosensitive semiconductor wafers not yet diced. Used in automation and surveillance equipment.
IGBT Silicon Die on Wafer
200mm silicon wafer containing unmounted insulated-gate bipolar transistor (IGBT) chips rated 1200V/200A for industrial motor drives and UPS systems. Classified as unmounted semiconductor dice under HTS 8541.59.00.40. Post-import processing includes wire bonding and encapsulation.
Schottky Barrier Diode Wafer
150mm silicon wafer with unmounted Schottky diode chips for high-frequency power rectification in switch-mode power supplies, 600V/10A rating. HTS 8541.59.00.40 covers these unseparated semiconductor wafers. Low forward voltage drop enables efficient DC-DC conversion.
SiC MOSFET Test Wafer
4-inch silicon carbide test wafer with process control monitor (PCM) structures and unmounted MOSFET dice for automotive traction inverters. Classified under HTS 8541.59.00.40 as semiconductor device wafers. Used for yield monitoring and process qualification.
GaAs HBT MMIC Wafer
100mm gallium arsenide wafer with heterojunction bipolar transistor monolithic microwave integrated circuit chips for satellite communications, operating 2-18 GHz. HTS 8541.59.00.40 for unmounted semiconductor wafers containing MMIC devices. High linearity for L-band transponders.