Silicon Carbide Power MOSFET Wafer from China
A 6-inch silicon carbide (SiC) wafer containing unmounted chips designed for high-voltage power MOSFET transistors used in electric vehicles and renewable energy inverters. Classified under HTS 8541.59.00.40 as unmounted semiconductor wafers for power semiconductor devices. These wafers undergo dicing into individual dice post-import for die attach in power modules.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide wafer specifications including diameter, doping type, and resistivity to confirm semiconductor device classification; declare exact material composition (SiC vs silicon) to avoid misclassification; obtain mill test certificates verifying unmounted status and no assembly