TOPCon Tunnel Oxide Passivated Contact PV Cell
Advanced TOPCon (Tunnel Oxide Passivated Contact) monocrystalline cell with ultra-low recombination losses for efficiencies exceeding 25%. This standalone cell fits HTS 8541.42.00 as a photosensitive semiconductor device. Features polysilicon passivated contacts.
Import Duty Rates by Country of Origin
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If classified as other semiconductor-based transducers
Advanced contact structures might align with transducer definitions.
If for semiconductor manufacturing machinery parts
TOPCon processes integrate with IC fabrication equipment parts.
Not sure which classification is right?
Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.
Import Tips & Compliance
• Include tunnel oxide layer thickness specs (<2nm) in technical datasheets
• Verify N-type vs P-type wafer origin for proper material declaration
• High-value cells require detailed R&D cost breakdowns for valuation
Related Products under HTS 8541.42.00
Monocrystalline Silicon Photovoltaic Cell
A single monocrystalline silicon photovoltaic cell designed to convert sunlight directly into electricity through the photovoltaic effect. This cell is not assembled into modules or panels, classifying it under HTS 8541.42.00 as an individual photosensitive semiconductor device. It features high efficiency ratings typically above 20% for solar energy conversion.
Polycrystalline Silicon Solar Cell
An individual polycrystalline silicon photovoltaic cell used in solar energy generation, featuring multiple crystal structures for cost-effective production. It falls under HTS 8541.42.00 because it is a discrete photosensitive semiconductor device not yet assembled into modules or panels. Typical efficiency ranges from 15-18%.
Thin-Film Cadmium Telluride PV Cell
A thin-film photovoltaic cell made from cadmium telluride (CdTe) material, offering flexibility and lower production costs for large-scale applications. Classified under HTS 8541.42.00 as it is a standalone photosensitive semiconductor device, not assembled into modules. Known for efficiencies around 18-22% in single-cell form.
PERC Monocrystalline Solar Cell
Passivated Emitter and Rear Cell (PERC) technology monocrystalline photovoltaic cell with enhanced rear passivation for higher efficiency. This individual cell is not assembled in modules, fitting HTS 8541.42.00 as a photosensitive semiconductor device. Achieves efficiencies over 22%.
Amorphous Silicon Thin-Film PV Cell
Flexible amorphous silicon photovoltaic cell ideal for building-integrated photovoltaics and portable applications. As a discrete cell not made up into panels, it qualifies for HTS 8541.42.00. Lower efficiency (6-12%) but excels in low-light conditions.
CIGS Copper Indium Gallium Selenide PV Cell
Copper indium gallium selenide (CIGS) thin-film photovoltaic cell known for high efficiency and performance in various lighting conditions. This unassembled cell is a photosensitive semiconductor device under HTS 8541.42.00. Efficiencies reach up to 23%.