</>Build with Tariff Intelligence|Programmatic access to tariff calculations and HS code classification.Explore Developer Resources →
8541.42.00/TOPCon Tunnel Oxide Passivated Contact PV Cell/Mexico

TOPCon Tunnel Oxide Passivated Contact PV Cell from Mexico

Advanced TOPCon (Tunnel Oxide Passivated Contact) monocrystalline cell with ultra-low recombination losses for efficiencies exceeding 25%. This standalone cell fits HTS 8541.42.00 as a photosensitive semiconductor device. Features polysilicon passivated contacts.

Duty Rate — Mexico → United States

10%

Rate breakdown

9903.05.5510%Section 301 (forced labor) — additional 10% ad valorem on products of Mexico
Calculate with your customs valueVerify classification with AI

Import Tips

• Include tunnel oxide layer thickness specs (<2nm) in technical datasheets

• Verify N-type vs P-type wafer origin for proper material declaration

• High-value cells require detailed R&D cost breakdowns for valuation

TOPCon Tunnel Oxide Passivated Contact PV Cell from Mexico — Import Duty Rate | HTS 8541.42.00