Photovoltaic cells not assembled in modules or made up into panels
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals; parts thereof: > Photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED): > Photovoltaic cells not assembled in modules or made up into panels
Duty Rate (from China)
Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Effective with respect to entries on or after September 27, 2024, articles the product of China, as provided for in subdivision (c) of U.S. note 31 to this subchapter
Subheadings
Products classified under HTS 8541.42.00
Monocrystalline Silicon Photovoltaic Cell
A single monocrystalline silicon photovoltaic cell designed to convert sunlight directly into electricity through the photovoltaic effect. This cell is not assembled into modules or panels, classifying it under HTS 8541.42.00 as an individual photosensitive semiconductor device. It features high efficiency ratings typically above 20% for solar energy conversion.
Polycrystalline Silicon Solar Cell
An individual polycrystalline silicon photovoltaic cell used in solar energy generation, featuring multiple crystal structures for cost-effective production. It falls under HTS 8541.42.00 because it is a discrete photosensitive semiconductor device not yet assembled into modules or panels. Typical efficiency ranges from 15-18%.
Thin-Film Cadmium Telluride PV Cell
A thin-film photovoltaic cell made from cadmium telluride (CdTe) material, offering flexibility and lower production costs for large-scale applications. Classified under HTS 8541.42.00 as it is a standalone photosensitive semiconductor device, not assembled into modules. Known for efficiencies around 18-22% in single-cell form.
PERC Monocrystalline Solar Cell
Passivated Emitter and Rear Cell (PERC) technology monocrystalline photovoltaic cell with enhanced rear passivation for higher efficiency. This individual cell is not assembled in modules, fitting HTS 8541.42.00 as a photosensitive semiconductor device. Achieves efficiencies over 22%.
Amorphous Silicon Thin-Film PV Cell
Flexible amorphous silicon photovoltaic cell ideal for building-integrated photovoltaics and portable applications. As a discrete cell not made up into panels, it qualifies for HTS 8541.42.00. Lower efficiency (6-12%) but excels in low-light conditions.
CIGS Copper Indium Gallium Selenide PV Cell
Copper indium gallium selenide (CIGS) thin-film photovoltaic cell known for high efficiency and performance in various lighting conditions. This unassembled cell is a photosensitive semiconductor device under HTS 8541.42.00. Efficiencies reach up to 23%.
Half-Cut Monocrystalline PV Cell
Precision laser-cut half-size monocrystalline photovoltaic cell reducing resistive losses when later assembled. Remains under HTS 8541.42.00 as it is not yet assembled into modules or panels. Improves module efficiency by minimizing shading effects.
Bifacial N-Type Silicon PV Cell
N-type monocrystalline photovoltaic cell capable of generating power from both front and rear surfaces for increased yield. Classified as an individual photosensitive semiconductor under HTS 8541.42.00, not assembled. Bifacial design boosts energy capture by 10-30%.
TOPCon Tunnel Oxide Passivated Contact PV Cell
Advanced TOPCon (Tunnel Oxide Passivated Contact) monocrystalline cell with ultra-low recombination losses for efficiencies exceeding 25%. This standalone cell fits HTS 8541.42.00 as a photosensitive semiconductor device. Features polysilicon passivated contacts.
Heterojunction Silicon PV Cell (HJT)
Heterojunction (HJT) photovoltaic cell combining crystalline silicon with thin amorphous silicon layers for superior passivation. Individual cell not assembled, under HTS 8541.42.00. Achieves efficiencies over 26% with low temperature coefficient.
Quantum Dot Enhanced PV Cell
Photovoltaic cell enhanced with quantum dot technology for improved light absorption across spectrum. Discrete photosensitive semiconductor device under HTS 8541.42.00, not assembled into panels. Targets multi-junction efficiency improvements.
Back Contact IBC PV Cell
Interdigitated Back Contact (IBC) monocrystalline photovoltaic cell with all contacts on rear surface for higher front efficiency. Unassembled cell under HTS 8541.42.00. SunPower-style design achieves 25%+ efficiency.
Tandem Perovskite-Silicon PV Cell
Emerging tandem photovoltaic cell stacking perovskite top cell on silicon bottom cell for >30% efficiency potential. Individual research-grade cell under HTS 8541.42.00. Not assembled into commercial modules.
Industrial Grade Silicon PV Cell Wafer
Completed industrial photovoltaic cell on silicon wafer ready for module tabbing, not assembled. HTS 8541.42.00 covers this photosensitive semiconductor device. M2 or G1 size standards for commercial production.
Space-Grade Triple Junction PV Cell
Gallium arsenide-based triple junction photovoltaic cell for satellite power systems with high radiation tolerance. Individual cell under HTS 8541.42.00, not assembled into space panels. Efficiencies >30% AM0 spectrum.