TOPCon Tunnel Oxide Passivated Contact PV Cell from Japan
Advanced TOPCon (Tunnel Oxide Passivated Contact) monocrystalline cell with ultra-low recombination losses for efficiencies exceeding 25%. This standalone cell fits HTS 8541.42.00 as a photosensitive semiconductor device. Features polysilicon passivated contacts.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Include tunnel oxide layer thickness specs (<2nm) in technical datasheets
• Verify N-type vs P-type wafer origin for proper material declaration
• High-value cells require detailed R&D cost breakdowns for valuation