Silicon Carbide Power Diode Die
Unmounted SiC Schottky diode dice for high-temperature, high-power applications in EV inverters and renewable energy systems. These 1200V-rated dice offer low switching losses compared to silicon. Classified in HTS 8541.10.0040 as unmounted chips/dice for non-LED diodes.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If assembled with other semiconductor devices
Multi-chip diode modules or hybrids classify under 8541.29 for other semiconductor devices
If imported as power supply rectifier assemblies
Complete diode rectifier stacks for power converters fall under 8504
If designed for specific measurement instruments
Specialized diode dice for test/measurement equipment may classify under 9030 instruments
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Import Tips & Compliance
• Provide SiC substrate certificates authenticating 4H polytype and micropipe density specifications
• Declare exact chip size and metallization pattern; larger power dice risk scrutiny for IC classification
• SiC materials face additional scrutiny for controlled technologies; prepare ITAR/EAR documentation
Related Products under HTS 8541.10.00.40
Automotive Grade Silicon Flyback Diode Wafer
AEC-Q101 qualified 200mm silicon wafers for flyback protection diodes in automotive ignition systems and DC-DC converters. Designed for high surge current and automotive temperature extremes. Unmounted automotive diode wafers under HTS 8541.10.0040.
Silicon Schottky Diode Wafer
A large silicon wafer containing thousands of unmounted Schottky diode chips used in power rectification and high-frequency switching applications. These wafers are produced through semiconductor fabrication processes and diced into individual dice post-import. Classified under HTS 8541.10.0040 as unmounted chips, dice, and wafers specifically for diodes other than photosensitive or LED types.
Gallium Arsenide PIN Diode Die
Individual unmounted GaAs PIN diode dice designed for RF switching, attenuation, and microwave applications in telecommunications. These dice feature precise p-i-n junction structures formed on gallium arsenide substrate. HTS 8541.10.0040 applies to such unmounted semiconductor dice for non-photosensitive, non-LED diodes.
Silicon Zener Diode Wafer
300mm silicon wafers patterned with Zener diode structures for voltage regulation in power supplies and protection circuits. These unseparated wafers undergo diffusion and metallization processes before dicing. Fits HTS 8541.10.0040 for unmounted diode wafers excluding photosensitive or LED variants.
200mm Silicon Rectifier Diode Wafer
200mm diameter silicon epitaxial wafers for high-voltage rectifier diodes used in automotive alternators and industrial power supplies. Features p-n junction arrays optimized for forward voltage drop and surge current. HTS 8541.10.0040 covers these unmounted diode wafer forms.
Germanium Point Contact Diode Chip
Unmounted germanium chips with whisker point-contact diodes for detector applications in microwave receivers and instrumentation. Known for low forward voltage and high-frequency response. HTS 8541.10.0040 includes such legacy semiconductor diode chips.