8541.10.00.40/Silicon Carbide Power Diode Die/Japan

Silicon Carbide Power Diode Die from Japan

Unmounted SiC Schottky diode dice for high-temperature, high-power applications in EV inverters and renewable energy systems. These 1200V-rated dice offer low switching losses compared to silicon. Classified in HTS 8541.10.0040 as unmounted chips/dice for non-LED diodes.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Provide SiC substrate certificates authenticating 4H polytype and micropipe density specifications

• Declare exact chip size and metallization pattern; larger power dice risk scrutiny for IC classification

• SiC materials face additional scrutiny for controlled technologies; prepare ITAR/EAR documentation