Silicon Carbide Power Diode Die from Japan
Unmounted SiC Schottky diode dice for high-temperature, high-power applications in EV inverters and renewable energy systems. These 1200V-rated dice offer low switching losses compared to silicon. Classified in HTS 8541.10.0040 as unmounted chips/dice for non-LED diodes.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Provide SiC substrate certificates authenticating 4H polytype and micropipe density specifications
• Declare exact chip size and metallization pattern; larger power dice risk scrutiny for IC classification
• SiC materials face additional scrutiny for controlled technologies; prepare ITAR/EAR documentation