200mm Silicon Rectifier Diode Wafer

200mm diameter silicon epitaxial wafers for high-voltage rectifier diodes used in automotive alternators and industrial power supplies. Features p-n junction arrays optimized for forward voltage drop and surge current. HTS 8541.10.0040 covers these unmounted diode wafer forms.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
🇨🇳ChinaFree+50.0%50%
🇲🇽MexicoFreeFree
🇨🇦CanadaFreeFree
🇩🇪GermanyFreeFree
🇯🇵JapanFreeFree

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8541Same rate: 50%

If already separated into individual dice

Separated, unmounted diode chips/dice remain in 8541.10 but different statistical suffix

8473.30Lower: 35% vs 50%

If parts of semiconductor manufacturing machines

Test wafers or monitor wafers for fab equipment classify under 8473 machinery parts

3824.99Lower: 15% vs 50%

If coated with photoresist or chemicals

Wafers prepared with chemical preparations for lithography fall under 3824

Not sure which classification is right?

Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.

Import Tips & Compliance

Specify epi-layer thickness and breakdown voltage ratings in commercial invoice for proper valuation

Include test wafer data showing diode parameters to validate classification over generic silicon

Automotive-qualified wafers may qualify for preferential tariff treatment under USMCA; verify origin certificates

Related Products under HTS 8541.10.00.40

Automotive Grade Silicon Flyback Diode Wafer

AEC-Q101 qualified 200mm silicon wafers for flyback protection diodes in automotive ignition systems and DC-DC converters. Designed for high surge current and automotive temperature extremes. Unmounted automotive diode wafers under HTS 8541.10.0040.

Silicon Schottky Diode Wafer

A large silicon wafer containing thousands of unmounted Schottky diode chips used in power rectification and high-frequency switching applications. These wafers are produced through semiconductor fabrication processes and diced into individual dice post-import. Classified under HTS 8541.10.0040 as unmounted chips, dice, and wafers specifically for diodes other than photosensitive or LED types.

Gallium Arsenide PIN Diode Die

Individual unmounted GaAs PIN diode dice designed for RF switching, attenuation, and microwave applications in telecommunications. These dice feature precise p-i-n junction structures formed on gallium arsenide substrate. HTS 8541.10.0040 applies to such unmounted semiconductor dice for non-photosensitive, non-LED diodes.

Silicon Zener Diode Wafer

300mm silicon wafers patterned with Zener diode structures for voltage regulation in power supplies and protection circuits. These unseparated wafers undergo diffusion and metallization processes before dicing. Fits HTS 8541.10.0040 for unmounted diode wafers excluding photosensitive or LED variants.

Silicon Carbide Power Diode Die

Unmounted SiC Schottky diode dice for high-temperature, high-power applications in EV inverters and renewable energy systems. These 1200V-rated dice offer low switching losses compared to silicon. Classified in HTS 8541.10.0040 as unmounted chips/dice for non-LED diodes.

Germanium Point Contact Diode Chip

Unmounted germanium chips with whisker point-contact diodes for detector applications in microwave receivers and instrumentation. Known for low forward voltage and high-frequency response. HTS 8541.10.0040 includes such legacy semiconductor diode chips.