200mm Silicon Rectifier Diode Wafer from Japan
200mm diameter silicon epitaxial wafers for high-voltage rectifier diodes used in automotive alternators and industrial power supplies. Features p-n junction arrays optimized for forward voltage drop and surge current. HTS 8541.10.0040 covers these unmounted diode wafer forms.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Specify epi-layer thickness and breakdown voltage ratings in commercial invoice for proper valuation
• Include test wafer data showing diode parameters to validate classification over generic silicon
• Automotive-qualified wafers may qualify for preferential tariff treatment under USMCA; verify origin certificates