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Rapid Thermal Processing RTP Furnace

Nonelectric semiconductor furnace using lamp arrays for ultra-fast wafer heating to 1200°C in seconds for annealing and silicide formation. Critical for submicron semiconductor device fabrication preventing dopant redistribution. HTS 8417.80.00.00 for industrial nonelectric processing furnaces.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
🇨🇳China3.9%+35.0%38.9%
🇲🇽Mexico3.9%+10.0%13.9%
🇨🇦Canada3.9%+10.0%13.9%
🇩🇪Germany3.9%+10.0%13.9%
🇯🇵Japan3.9%+10.0%13.9%

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8486.40.00Lower: 25% vs 38.9%

If single-wafer RTP systems for advanced nodes

Statistical notes cover RTP as semiconductor processing apparatus.

9013.80Lower: 14.5% vs 38.9%

If marketed for general laboratory thermal analysis

Non-specific wafer processing shifts to Chapter 90 laboratory apparatus.

8479.89.65Lower: 20.3% vs 38.9%

If integrated with cluster tool architecture

Part of multi-chamber semiconductor fab tools classify under 8479.

Not sure which classification is right?

Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.

Import Tips & Compliance

Specify lamp heating as nonelectric radiant process; provide ramp rate specifications proving semiconductor application

Ensure cleanroom compatibility certification for preferential treatment

Related Products under HTS 8417.80.00.00

Czochralski Crystal Puller Furnace

A nonelectric industrial furnace using the Czochralski method to grow monocrystalline silicon boules from molten semiconductor material for subsequent wafer slicing. It maintains precise temperature gradients in a vacuum or inert gas environment to produce high-purity crystals essential for semiconductor manufacturing. Classified under 8417.80.00.00 as a specialized nonelectric furnace for industrial semiconductor processing, excluding electric heating elements.

Float Zone Crystal Growth Furnace

Nonelectric furnace employing the float zone method to purify and grow monocrystalline semiconductor rods, particularly silicon, by melting a narrow zone with RF heating in a vacuum chamber. Critical for producing ultra-high purity materials used in power semiconductors and solar cells. Falls under 8417.80.00.00 as an industrial nonelectric furnace tailored for semiconductor boule production.

Wafer Annealing Furnace

Industrial nonelectric furnace for high-temperature annealing of semiconductor wafers to relieve stresses and activate dopants after ion implantation. Uses rapid thermal processing in controlled atmospheres without electric resistance heating. Classified in 8417.80.00.00 for its role in semiconductor device fabrication processing.

Crystal Boule Grinder Furnace Enclosure

Specialized nonelectric furnace enclosure maintaining thermal stability during grinding of semiconductor crystal boules to precise diameters, as defined in statistical notes for wafer preparation equipment. Controls dust and temperature for flat grinding indicating conductivity type. HTS 8417.80.00.00 covers this industrial furnace for semiconductor boule processing.

Semiconductor Diffusion Furnace

Nonelectric industrial furnace for dopant diffusion into semiconductor wafers creating device junctions, using gas phase reactions in horizontal or vertical quartz tubes. Essential for bipolar and MOS device fabrication. Falls under 8417.80.00.00 as nonelectric furnace for semiconductor processing.

Hydrogen Bake Furnace

Nonelectric furnace for high-temperature hydrogen baking of semiconductor wafers to remove native oxides and hydrogen-passivate surface defects before epitaxial growth. Uses forming gas mixtures in controlled environment. Classified 8417.80.00.00 as industrial furnace for wafer preparation processing.