Rapid Thermal Processing RTP Furnace from Mexico
Nonelectric semiconductor furnace using lamp arrays for ultra-fast wafer heating to 1200°C in seconds for annealing and silicide formation. Critical for submicron semiconductor device fabrication preventing dopant redistribution. HTS 8417.80.00.00 for industrial nonelectric processing furnaces.
Duty Rate — Mexico → United States
13.9%
Rate breakdown
9903.05.5510%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.94, articles the product of Mexico, as provided for in U.S. note 52 to this subchapter
Import Tips
• Specify lamp heating as nonelectric radiant process; provide ramp rate specifications proving semiconductor application
• Ensure cleanroom compatibility certification for preferential treatment