Other, except parts
Industrial or laboratory furnaces and ovens, including incinerators, nonelectric, and parts thereof: > Other, except parts
Duty Rate (from China)
Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Products classified under HTS 8417.80.00.00
Czochralski Crystal Puller Furnace
A nonelectric industrial furnace using the Czochralski method to grow monocrystalline silicon boules from molten semiconductor material for subsequent wafer slicing. It maintains precise temperature gradients in a vacuum or inert gas environment to produce high-purity crystals essential for semiconductor manufacturing. Classified under 8417.80.00.00 as a specialized nonelectric furnace for industrial semiconductor processing, excluding electric heating elements.
Float Zone Crystal Growth Furnace
Nonelectric furnace employing the float zone method to purify and grow monocrystalline semiconductor rods, particularly silicon, by melting a narrow zone with RF heating in a vacuum chamber. Critical for producing ultra-high purity materials used in power semiconductors and solar cells. Falls under 8417.80.00.00 as an industrial nonelectric furnace tailored for semiconductor boule production.
Wafer Annealing Furnace
Industrial nonelectric furnace for high-temperature annealing of semiconductor wafers to relieve stresses and activate dopants after ion implantation. Uses rapid thermal processing in controlled atmospheres without electric resistance heating. Classified in 8417.80.00.00 for its role in semiconductor device fabrication processing.
Crystal Boule Grinder Furnace Enclosure
Specialized nonelectric furnace enclosure maintaining thermal stability during grinding of semiconductor crystal boules to precise diameters, as defined in statistical notes for wafer preparation equipment. Controls dust and temperature for flat grinding indicating conductivity type. HTS 8417.80.00.00 covers this industrial furnace for semiconductor boule processing.
Semiconductor Diffusion Furnace
Nonelectric industrial furnace for dopant diffusion into semiconductor wafers creating device junctions, using gas phase reactions in horizontal or vertical quartz tubes. Essential for bipolar and MOS device fabrication. Falls under 8417.80.00.00 as nonelectric furnace for semiconductor processing.
Rapid Thermal Processing RTP Furnace
Nonelectric semiconductor furnace using lamp arrays for ultra-fast wafer heating to 1200°C in seconds for annealing and silicide formation. Critical for submicron semiconductor device fabrication preventing dopant redistribution. HTS 8417.80.00.00 for industrial nonelectric processing furnaces.
Hydrogen Bake Furnace
Nonelectric furnace for high-temperature hydrogen baking of semiconductor wafers to remove native oxides and hydrogen-passivate surface defects before epitaxial growth. Uses forming gas mixtures in controlled environment. Classified 8417.80.00.00 as industrial furnace for wafer preparation processing.
Crystal Ingot Anneal Furnace
Industrial nonelectric furnace for annealing semiconductor crystal ingots post-growth to minimize dislocation density and stabilize resistivity profiles. Slow ramp rates over 24+ hours in vertical configuration. HTS 8417.80.00.00 for semiconductor material processing furnaces.
Wafer Oxidation Furnace
Nonelectric horizontal furnace growing thermal oxide layers on semiconductor wafers via steam or dry oxygen ambient at 900-1200°C. Fundamental for MOS gate dielectrics and isolation structures. Classified under 8417.80.00.00 as industrial processing furnace.
Silicon Carbide Sublimation Furnace
Nonelectric high-temperature furnace using physical vapor transport (PVT) method to grow silicon carbide boules for power electronics substrates. Operates above 2000°C in vacuum with graphite components. HTS 8417.80.00.00 covers specialized semiconductor crystal growth furnaces.