Rapid Thermal Processing RTP Furnace from Japan
Nonelectric semiconductor furnace using lamp arrays for ultra-fast wafer heating to 1200°C in seconds for annealing and silicide formation. Critical for submicron semiconductor device fabrication preventing dopant redistribution. HTS 8417.80.00.00 for industrial nonelectric processing furnaces.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Specify lamp heating as nonelectric radiant process; provide ramp rate specifications proving semiconductor application
• Ensure cleanroom compatibility certification for preferential treatment