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HBFC Plasma Etching Gas Mixture

Plasma etching gas blend with HBFC-236ea (CF3CH2CF2Br) for semiconductor wafer fabrication. HTS 3827.12.00.00 due to HBFC as reactive halogenated component in process gas mixture. Essential for 3D NAND flash memory production.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
🇨🇳China3.7%+35.0%38.7%
🇲🇽Mexico3.7%+10.0%13.7%
🇨🇦Canada3.7%+10.0%13.7%
🇩🇪Germany3.7%+10.0%13.7%
🇯🇵Japan3.7%+10.0%13.7%

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

3822Lower: 10% vs 38.7%

If certified semiconductor diagnostic reagent

Gases qualified for equipment calibration/diagnostics classify as lab reagents.

2853Lower: 12.8% vs 38.7%

If rare gas mixtures

Significant rare gas content shifts to other inorganic chemical compounds.

3824.99Lower: 15% vs 38.7%

If waste from semiconductor production

Exhausted process gases containing HBFCs classify as chemical production wastes.

Not sure which classification is right?

Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.

Import Tips & Compliance

Submit TSCA PMN (Premanufacture Notice) for new semiconductor process gases containing HBFCs

Include wafer etch rate specifications proving superior selectivity vs HFC alternatives

Document as 'process gas' not compressed gas to avoid Chapter 28 pure gas classification

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