3827.12.00.00/HBFC Plasma Etching Gas Mixture/China

HBFC Plasma Etching Gas Mixture from China

Plasma etching gas blend with HBFC-236ea (CF3CH2CF2Br) for semiconductor wafer fabrication. HTS 3827.12.00.00 due to HBFC as reactive halogenated component in process gas mixture. Essential for 3D NAND flash memory production.

Duty Rate — China → United States

38.7%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter

9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)

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Import Tips

• Submit TSCA PMN (Premanufacture Notice) for new semiconductor process gases containing HBFCs

• Include wafer etch rate specifications proving superior selectivity vs HFC alternatives

• Document as 'process gas' not compressed gas to avoid Chapter 28 pure gas classification