HBFC Plasma Etching Gas Mixture from Germany
Plasma etching gas blend with HBFC-236ea (CF3CH2CF2Br) for semiconductor wafer fabrication. HTS 3827.12.00.00 due to HBFC as reactive halogenated component in process gas mixture. Essential for 3D NAND flash memory production.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Section 301 (forced labor) — European Union member state (col1 rate < 10 percent): MFN < 10% → total duty capped at 10%
Import Tips
• Submit TSCA PMN (Premanufacture Notice) for new semiconductor process gases containing HBFCs
• Include wafer etch rate specifications proving superior selectivity vs HFC alternatives
• Document as 'process gas' not compressed gas to avoid Chapter 28 pure gas classification