HBFC Plasma Etching Gas Mixture from Mexico
Plasma etching gas blend with HBFC-236ea (CF3CH2CF2Br) for semiconductor wafer fabrication. HTS 3827.12.00.00 due to HBFC as reactive halogenated component in process gas mixture. Essential for 3D NAND flash memory production.
Duty Rate — Mexico → United States
13.7%
Rate breakdown
9903.05.5510%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.94, articles the product of Mexico, as provided for in U.S. note 52 to this subchapter
Import Tips
• Submit TSCA PMN (Premanufacture Notice) for new semiconductor process gases containing HBFCs
• Include wafer etch rate specifications proving superior selectivity vs HFC alternatives
• Document as 'process gas' not compressed gas to avoid Chapter 28 pure gas classification