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3827.12.00.00/HBFC Plasma Etching Gas Mixture/Mexico

HBFC Plasma Etching Gas Mixture from Mexico

Plasma etching gas blend with HBFC-236ea (CF3CH2CF2Br) for semiconductor wafer fabrication. HTS 3827.12.00.00 due to HBFC as reactive halogenated component in process gas mixture. Essential for 3D NAND flash memory production.

Duty Rate — Mexico → United States

13.7%

Rate breakdown

9903.05.5510%Section 301 (forced labor) — additional 10% ad valorem on products of Mexico
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Import Tips

• Submit TSCA PMN (Premanufacture Notice) for new semiconductor process gases containing HBFCs

• Include wafer etch rate specifications proving superior selectivity vs HFC alternatives

• Document as 'process gas' not compressed gas to avoid Chapter 28 pure gas classification