3827.12.00.00/HBFC Plasma Etching Gas Mixture/Japan

HBFC Plasma Etching Gas Mixture from Japan

Plasma etching gas blend with HBFC-236ea (CF3CH2CF2Br) for semiconductor wafer fabrication. HTS 3827.12.00.00 due to HBFC as reactive halogenated component in process gas mixture. Essential for 3D NAND flash memory production.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Submit TSCA PMN (Premanufacture Notice) for new semiconductor process gases containing HBFCs

• Include wafer etch rate specifications proving superior selectivity vs HFC alternatives

• Document as 'process gas' not compressed gas to avoid Chapter 28 pure gas classification