HBFC Plasma Etching Gas Mixture from Japan
Plasma etching gas blend with HBFC-236ea (CF3CH2CF2Br) for semiconductor wafer fabrication. HTS 3827.12.00.00 due to HBFC as reactive halogenated component in process gas mixture. Essential for 3D NAND flash memory production.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Submit TSCA PMN (Premanufacture Notice) for new semiconductor process gases containing HBFCs
• Include wafer etch rate specifications proving superior selectivity vs HFC alternatives
• Document as 'process gas' not compressed gas to avoid Chapter 28 pure gas classification