Gallium Arsenide Ingot
LEC-grown gallium arsenide single crystal ingot over 2.5g for LED and solar cell substrates. Fits HTS 3824.99.1900 as cultured crystal preparation not elsewhere specified. Semiconductor compound with high electron mobility.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | 6.5% | +35.0% | 41.5% |
| 🇲🇽Mexico | 6.5% | +10.0% | 16.5% |
| 🇨🇦Canada | 6.5% | +10.0% | 16.5% |
| 🇩🇪Germany | 6.5% | +10.0% | 16.5% |
| 🇯🇵Japan | 6.5% | +10.0% | 16.5% |
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If processed into doped wafers
Doped GaAs wafers for semiconductors are specifically classified.
If as pure arsenide compound, not crystal
Chemical compounds of arsenic without crystal structure in Chapter 28.
Not sure which classification is right?
Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.
Import Tips & Compliance
• Include safety data sheets due to arsenic content; comply with hazardous material regs
• Certify LEC/VGF growth method and purity levels for proper chemical classification
• Do not slice prior to import to avoid 3818 semiconductor media category
Related Products under HTS 3824.99.19.00
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High-purity monocrystalline silicon ingot, cultured via Czochralski method, weighing more than 2.5 grams, used as raw material for wafer slicing. Falls under HTS 3824.99.1900 for cultured crystals not specified elsewhere or as optical elements. Essential for electronics industry substrates.
KY Crystal Ingot
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YAG Crystal Boule
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CVD-grown single-crystal diamond substrate weighing more than 2.5g, used in electronics heat sinks. Classified in HTS 3824.99.1900 as cultured crystals not elsewhere specified. Synthetic lab-grown for high thermal conductivity applications.
Lithium Niobate Crystal
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