Gallium Arsenide Ingot from Germany
LEC-grown gallium arsenide single crystal ingot over 2.5g for LED and solar cell substrates. Fits HTS 3824.99.1900 as cultured crystal preparation not elsewhere specified. Semiconductor compound with high electron mobility.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.97, articles the product of a member state of the European Union, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 10 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Include safety data sheets due to arsenic content; comply with hazardous material regs
• Certify LEC/VGF growth method and purity levels for proper chemical classification
• Do not slice prior to import to avoid 3818 semiconductor media category