Synthetic Sapphire Boule
A large single-crystal synthetic sapphire boule weighing over 2.5 grams, used in electronics and optics manufacturing. Classified under HTS 3824.99.1900 as cultured crystals (excluding optical elements of Chapter 90) that are not elsewhere specified. These are grown via methods like Czochralski process for substrate applications.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | 6.5% | +35.0% | 41.5% |
| 🇲🇽Mexico | 6.5% | +10.0% | 16.5% |
| 🇨🇦Canada | 6.5% | +10.0% | 16.5% |
| 🇩🇪Germany | 6.5% | +10.0% | 16.5% |
| 🇯🇵Japan | 6.5% | +10.0% | 16.5% |
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If processed into synthetic gemstones for jewelry
Polished or cut synthetic stones for adornment fall under Chapter 71 as synthetic precious stones.
If weighing less than 2.5g each
Smaller cultured crystals do not meet the subheading weight threshold and classify as other chemical preparations.
If fabricated into optical elements like windows or lenses
Finished optical components from cultured crystals are excluded and covered in Chapter 90.
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Import Tips & Compliance
• Verify crystal weight exceeds 2.5g per unit and obtain lab certification confirming synthetic cultured origin to avoid misclassification as natural gems
• Include detailed growth method documentation (e.g
• Kyropoulos process) and end-use statements to distinguish from optical elements in Chapter 90
Related Products under HTS 3824.99.19.00
Silicon Ingot for Semiconductors
High-purity monocrystalline silicon ingot, cultured via Czochralski method, weighing more than 2.5 grams, used as raw material for wafer slicing. Falls under HTS 3824.99.1900 for cultured crystals not specified elsewhere or as optical elements. Essential for electronics industry substrates.
Gallium Arsenide Ingot
LEC-grown gallium arsenide single crystal ingot over 2.5g for LED and solar cell substrates. Fits HTS 3824.99.1900 as cultured crystal preparation not elsewhere specified. Semiconductor compound with high electron mobility.
KY Crystal Ingot
Potassium Titanyl Phosphate (KTP) single crystal ingot, flux method grown, over 2.5g for nonlinear optics. Classified HTS 3824.99.1900 as cultured crystal not optical element. Used in frequency doubling lasers.
YAG Crystal Boule
Yttrium Aluminum Garnet (YAG) single crystal boule, grown by Czochralski process, over 2.5 grams, for laser rod production. HTS 3824.99.1900 applies to such cultured crystals excluding Chapter 90 optics. Used in solid-state lasers and scintillators.
Grown Diamond Substrate
CVD-grown single-crystal diamond substrate weighing more than 2.5g, used in electronics heat sinks. Classified in HTS 3824.99.1900 as cultured crystals not elsewhere specified. Synthetic lab-grown for high thermal conductivity applications.
Lithium Niobate Crystal
Monocrystalline lithium niobate boule, flux-grown, exceeding 2.5 grams, for electro-optic devices. HTS 3824.99.1900 for cultured crystals (non-optical elements). Key material in telecommunications and photonics.