Gallium Arsenide Ingot from Japan
LEC-grown gallium arsenide single crystal ingot over 2.5g for LED and solar cell substrates. Fits HTS 3824.99.1900 as cultured crystal preparation not elsewhere specified. Semiconductor compound with high electron mobility.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Include safety data sheets due to arsenic content; comply with hazardous material regs
• Certify LEC/VGF growth method and purity levels for proper chemical classification
• Do not slice prior to import to avoid 3818 semiconductor media category