Silicon Carbide Ingot for Semiconductor Wafer Production
A large cultured silicon carbide crystal grown via physical vapor transport method, weighing over 2.5 grams, supplied in ingot form before slicing into wafers. Classified under HTS 3824.99.1100 as cultured crystals (not optical elements) in ingot shape for industrial applications like power electronics. These ingots provide superior thermal conductivity and hardness essential for high-performance semiconductors.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | +35.0% | 35% |
| 🇲🇽Mexico | Free | +10.0% | 10% |
| 🇨🇦Canada | Free | +10.0% | 10% |
| 🇩🇪Germany | Free | +10.0% | 10% |
| 🇯🇵Japan | Free | +10.0% | 10% |
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If classified primarily as inorganic carbide rather than cultured crystal
Basic silicon carbide in crude form falls under Chapter 28 carbides, excluding doped/processed cultured variants.
If when sold as foundry mold binder component
If marketed with binders for foundry use, shifts to prepared foundry binders rather than pure cultured crystals.
If after slicing and doping into photosensitive semiconductor wafers
Processed into semiconductor devices, moves from Chapter 38 preparations to Chapter 85 electrical photosensitive components.
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Import Tips & Compliance
• Verify crystal purity certification (e.g
• >99.99% SiC) and weight documentation to confirm HTS 3824.99.1100 classification over Chapter 28 inorganic chemicals
• Include material safety data sheets (MSDS) and end-use statements for semiconductor fabrication to avoid reclassification as basic chemicals
Related Products under HTS 3824.99.11.00
Yttrium Aluminum Garnet (YAG) Ingot for Laser Rods
Doped Y3Al5O12 (YAG) crystal ingot grown by Czochralski method, over 2.5g, for Nd:YAG solid-state laser rods. Classified HTS 3824.99.1100 as cultured non-optical crystal ingot. Hosts neodymium ions for 1064nm laser emission in medical/industrial applications.
Gallium Nitride Ingot for LED Substrate Manufacturing
Cultured gallium nitride (GaN) boule grown by hydride vapor phase epitaxy, exceeding 2.5 grams, in cylindrical ingot form for subsequent wafering. Falls under HTS 3824.99.1100 as non-optical cultured crystals used in optoelectronics substrates. GaN ingots enable blue LED and high-electron-mobility transistor production due to wide bandgap properties.
Sapphire Ingot for Optical Window Substrates
Czochralski-grown synthetic sapphire (aluminum oxide) ingot weighing more than 2.5 grams, used for laser windows and scratch-resistant displays. HTS 3824.99.1100 applies to cultured crystal ingots excluding Chapter 90 optical elements. Sapphire's extreme hardness (9 Mohs) makes it ideal for aerospace and military optics.
Silicon Ingot for Power Semiconductor Slicing
Monocrystalline silicon ingot produced by Czochralski process, over 2.5 grams, for high-voltage power diode wafer production. Classified HTS 3824.99.1100 as cultured crystal ingot (non-optical) in Chapter 38 preparations. High-purity n/p-type doped silicon essential for IGBT and thyristor manufacturing.
Quartz Ingot for Photomask Substrates
Synthetic quartz crystal ingot (fused silica) grown hydrothermally, exceeding 2.5g weight, for EUV photomask blanks in chip fabrication. HTS 3824.99.1100 for cultured non-optical crystals in ingot form. Ultra-low thermal expansion coefficient critical for nanometer precision lithography.
Calcium Fluoride Ingot for UV Laser Optics
Czochralski-grown CaF2 single crystal ingot >2.5g for excimer laser optical windows transmitting below 200nm. HTS 3824.99.1100 covers these cultured crystal ingots excluding Chapter 90 elements. Exceptional UV transparency down to 120nm wavelength.