Silicon Carbide Ingot for Semiconductor Wafer Production from Germany
A large cultured silicon carbide crystal grown via physical vapor transport method, weighing over 2.5 grams, supplied in ingot form before slicing into wafers. Classified under HTS 3824.99.1100 as cultured crystals (not optical elements) in ingot shape for industrial applications like power electronics. These ingots provide superior thermal conductivity and hardness essential for high-performance semiconductors.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.97, articles the product of a member state of the European Union, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 10 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Verify crystal purity certification (e.g
• >99.99% SiC) and weight documentation to confirm HTS 3824.99.1100 classification over Chapter 28 inorganic chemicals
• Include material safety data sheets (MSDS) and end-use statements for semiconductor fabrication to avoid reclassification as basic chemicals