In the form of ingots
Prepared binders for foundry molds or cores; chemical products and preparations of the chemical or allied industries (including those consisting of mixtures of natural products), not elsewhere specified or included: > Other: > Other: > Cultured crystals (other than optical elements of chapter 90), weighing not less than 2.5 g each: > In the form of ingots
Duty Rate (from China)
Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Products classified under HTS 3824.99.11.00
Yttrium Aluminum Garnet (YAG) Ingot for Laser Rods
Doped Y3Al5O12 (YAG) crystal ingot grown by Czochralski method, over 2.5g, for Nd:YAG solid-state laser rods. Classified HTS 3824.99.1100 as cultured non-optical crystal ingot. Hosts neodymium ions for 1064nm laser emission in medical/industrial applications.
Silicon Carbide Ingot for Semiconductor Wafer Production
A large cultured silicon carbide crystal grown via physical vapor transport method, weighing over 2.5 grams, supplied in ingot form before slicing into wafers. Classified under HTS 3824.99.1100 as cultured crystals (not optical elements) in ingot shape for industrial applications like power electronics. These ingots provide superior thermal conductivity and hardness essential for high-performance semiconductors.
Gallium Nitride Ingot for LED Substrate Manufacturing
Cultured gallium nitride (GaN) boule grown by hydride vapor phase epitaxy, exceeding 2.5 grams, in cylindrical ingot form for subsequent wafering. Falls under HTS 3824.99.1100 as non-optical cultured crystals used in optoelectronics substrates. GaN ingots enable blue LED and high-electron-mobility transistor production due to wide bandgap properties.
Sapphire Ingot for Optical Window Substrates
Czochralski-grown synthetic sapphire (aluminum oxide) ingot weighing more than 2.5 grams, used for laser windows and scratch-resistant displays. HTS 3824.99.1100 applies to cultured crystal ingots excluding Chapter 90 optical elements. Sapphire's extreme hardness (9 Mohs) makes it ideal for aerospace and military optics.
Silicon Ingot for Power Semiconductor Slicing
Monocrystalline silicon ingot produced by Czochralski process, over 2.5 grams, for high-voltage power diode wafer production. Classified HTS 3824.99.1100 as cultured crystal ingot (non-optical) in Chapter 38 preparations. High-purity n/p-type doped silicon essential for IGBT and thyristor manufacturing.
Quartz Ingot for Photomask Substrates
Synthetic quartz crystal ingot (fused silica) grown hydrothermally, exceeding 2.5g weight, for EUV photomask blanks in chip fabrication. HTS 3824.99.1100 for cultured non-optical crystals in ingot form. Ultra-low thermal expansion coefficient critical for nanometer precision lithography.
Calcium Fluoride Ingot for UV Laser Optics
Czochralski-grown CaF2 single crystal ingot >2.5g for excimer laser optical windows transmitting below 200nm. HTS 3824.99.1100 covers these cultured crystal ingots excluding Chapter 90 elements. Exceptional UV transparency down to 120nm wavelength.